Type: N-channel MOSFET, power channel. Purpose: control and switching of DC power circuits, converters, inverters, motors. Maximum drain-source voltage (Vds): 200 V. Maximum drain current (Id): 9 A at Tc = 25°C. Gate-source voltage (Vgs): ±20 V. Channel resistance (Rds(on)): 0.18 Ohm at Vgs = 10 V. Power dissipation (Pd): 55 W at Tc = 25°C. Case temperature (Tj): –55°C … +150°C. Package: TO‑220. Features: low channel resistance, high switching speed, overload resistance. *Depending on the supply, the appearance and package contents may differ from the images on the website. The appearance does not affect the quality and characteristics of the product.
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