The IGP15T60F is an IGBT (Insulated Gate Bipolar Transistor) with a maximum collector-emitter voltage of 600 V and a maximum continuous collector current of 26 A. It provides high efficiency and reliability in applications requiring control of high currents and voltages. Key features: Transistor type: N-channel IGBT; Maximum power dissipation: 130 W; Maximum collector-emitter voltage: 600 V; Maximum emitter-gate voltage: 20 V; Maximum continuous collector current: 26 A at 25°C; Typical collector-emitter saturation voltage: 1.5 at 25°C. Thanks to its characteristics, the IGP15T60F is widely used in power supplies, inverters, and other power electronic devices where efficient control of high voltages and currents is required. *Depending on the supply, the appearance and package contents may differ from the images on the website. The appearance does not affect the quality and characteristics of the product.